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Image Search Results
Journal: Sensors (Basel, Switzerland)
Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell
doi: 10.3390/s22010033
Figure Lengend Snippet: Geometric parameters of the 14-nm carbon nanotube field-effect transistor and FinFET.
Article Snippet: Compared to the
Techniques:
Journal: Sensors (Basel, Switzerland)
Article Title: Design and Analysis of Soft Error Rate in FET/CNTFET Based Radiation Hardened SRAM Cell
doi: 10.3390/s22010033
Figure Lengend Snippet: Simulated virtual source carbon nanotube field effect transistor: ( a ) 3D structure of the VS-CNTFET structure implemented in the SILVACO Atlas TCAD tool, ( b ) cross sectional view of the CNTFET where the 4H-SiC has the property of semiconducting carbon nanotubes, ( c ) cross sectional view of FinFET and ( d ) I–V characteristics extracted from the device.
Article Snippet: Compared to the
Techniques: